Large amount of hydrogen was disadvantage to the basal plane orientation , but it is helpful for the c axis paralleling to the substrate 大量h的存在不利于基面平行襯底的取向的發(fā)生,但能夠滿足c軸平行襯底的條件(在一定偏壓下) 。
On the other hand , certain amount of ar is benefit for the basal plane orientation , which is similar to what observed in mwecr cvd ~ & bn ~ i , the deposition of al 一定量的ar有利于產(chǎn)生基面平行襯底的取向,這與其他沉積al的實驗一致。氣體對取向的影響可能與物理轟擊作用和相變時的過飽和度均有關(guān)系。
2 we studied the films with raman polarization spectrum . the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition 張生僅北京工業(yè)大學(xué)博士學(xué)位論文摘要2利用raman偏振光譜研究了薄膜的性質(zhì),對基面非平行襯底的取向, raman譜隨偏振條件的不同而變化。
E ) with the help of pecvd , we found that high substrate temperature is advantage to the basal plane orientation . higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly E )高溫有利于基面平行于襯底的取向,在高的生長溫度下吸附于襯底表面的沉積粒子能夠迅速遷移到二維核的位置,并使粒子有足夠能量調(diào)整位置。
C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films . low bias is helpful for the basal plane orientation , while under high bias the films shows that the c axis of bn was nearly parallel to the substrate C )偏壓或離子轟擊對取向有重要影響,低偏壓有利于形成基面對襯底平行的取向,而在高偏壓下,薄膜表現(xiàn)為c軸平行襯底的取向。